sqs405enw www.vishay.com vishay siliconix s15-0545-rev. a, 18-mar-15 1 document number: 62984 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive p-channel 12 v (d-s) 175 c mosfet marking code : q022 features ? trenchfet ? power mosfet ? aec-q101 qualified d ? 100 % r g and uis tested ? wettable flank terminals ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr4 material). d. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. product summary v ds (v) -12 r ds(on) ( ) at v gs = -4.5 v 0.020 r ds(on) ( ) at v gs = -2.5 v 0.026 i d (a) -16 configuration single powerpak ? 1212-8 s in g le top view 1 3.3 mm 3.3 mm bottom view 1 s s s 3 s 4 g d 8 d 7 d 6 d 5 p-channel mosfet s g d ordering information package powerpak 1212-8 lead (pb)-free and halogen-free sqs405enw-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -12 v gate-source voltage v gs 8 continuous drain current a t c = 25 c i d -16 a t c = 125 c -16 continuous source curre nt (diode conduction) a i s -16 pulsed drain current b i dm -64 single pulse avalanche current l = 0.1 mh i as -19 single pulse avalanche energy e as 18 mj maximum power dissipation b t c = 25 c p d 39 w t c = 125 c 13 operating junction and storage temperature range t j , t stg -55 to +175 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 81 c/w junction-to-case (drain) r thjc 3.8
sqs405enw www.vishay.com vishay siliconix s15-0545-rev. a, 18-mar-15 2 document number: 62984 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = -250 a -12 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = -250 a -0.45 -0.6 -1 gate-source leakage i gss v ds = 0 v, v gs = 8 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = -12 v - - -1 a v gs = 0 v v ds = -12 v, t j = 125 c - - -50 v gs = 0 v v ds = -12 v, t j = 175 c - - -150 on-state drain current a i d(on) v gs = -4.5 v v ds -5 v -20 - - a drain-source on-state resistance a r ds(on) v gs = -4.5 v i d = -13.5 a - 0.014 0.020 v gs = -4.5 v i d = -13.5 a - - 0.024 v gs = -4.5 v i d = -13.5 a - - 0.026 v gs = -2.5 v i d = -12 a - 0.017 0.026 forward transconductance b g fs v ds = -6 v, i d = -13.5 a - 34 - s dynamic b input capacitance c iss v gs = 0 v v ds = -6 v, f = 1 mhz - 2210 2650 pf output capacitance c oss - 840 1010 reverse transfer capacitance c rss - 660 800 total gate charge c q g v gs = -8 v v ds = -6 v, i d = -10 a -49.875 nc gate-source charge c q gs -3.85.9 gate-drain charge c q gd -8.215 gate resistance r g f = 1 mhz 1.1 2.4 4 turn-on delay time c t d(on) v dd = -6 v, r l = 0.6 i d ? -1.5 a, v gen = -4.5 v, r g = 1 - 27 34.5 ns rise time c t r -2935 turn-off delay time c t d(off) -5972 fall time c t f -2632 source-drain diode ratings and characteristics b pulsed current a i sm ---64a forward voltage v sd i f = -10 a, v gs = 0 - -0.8 -1.1 v
sqs405enw www.vishay.com vishay siliconix s15-0545-rev. a, 18-mar-15 3 document number: 62984 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 0246810 6 12 18 24 30 v d s - drain-to- s ource voltage (v) i d - drain current (a) v gs = 5 v thru 2 v 1.5 v 0 10 20 30 40 50 0 6 12 18 24 30 g f s -tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 500 1000 1500 2000 2500 3000 3500 4000 0 2 4 6 8 10 12 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss gs - g ate-to- s ource voltage (v) i d - drain current (a) t c = 125 c t c = 25 c t c = - 55 c 0.00 0.02 0.04 0.06 0.08 0 6 12 18 24 30 r d s (on) -on-re s i s tance () i d - drain current (a) v gs = 1.8 v v gs gs - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0 2 4 6 8 050 10 20 30 40 v d s = 6 v i d = 10 a
sqs405enw www.vishay.com vishay siliconix s15-0545-rev. a, 18-mar-15 4 document number: 62984 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage threshold voltage drain source breakdown vs . junction temperature 0.8 - 50 - 25 25 75 125 0 50 100 150 175 0.9 1.1 1.0 1.2 1.3 r d s (on) - on-re s i s tance (normalized) t j - junction temperature (c) i d = 13 a v gs = 4.5 v 0.00 01 3 245 0.08 0.06 0.04 0.02 0.10 v gs - g ate-to- s ource voltage (v) r d s (on) - on-re s i s tance ( ) t j = 150 c t j = 25 c 0.001 0.0 0.2 0.6 1.0 0.4 0.8 1.2 0.01 1 0.1 10 100 i s - s ource current (a) t j = 150 c t j = 25 c v s d - s ource-to-drain voltage (v) -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma - 16.0 - 50 - 25 25 75 125 0 50 100 150 175 - 14.0 - 14.5 - 15.0 - 15.5 - 13.5 - 13.0 brreakdown voltage t j - junction temperature (c) i d = 1 ma
sqs405enw www.vishay.com vishay siliconix s15-0545-rev. a, 18-mar-15 5 document number: 62984 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified i d - drain current (a) bvd ss limited t c = 25 c s ingle pul s e i dm limited limited by r d s (on) * i d limited 1 m s 10 m s 100 m s , 1 s , 10 s , dc 10 -4 10 -3 10 -2 10 -1 1 10 100 600 2 1 0.1 0.01 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance duty cycle = 0.5 s ingle pul s e 0.2 0.05 0.1 0.02 note s : 1. duty cycle, d = 2. per unit ba s e = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s urface mounted t 1 p dm t 2
sqs405enw www.vishay.com vishay siliconix s15-0545-rev. a, 18-mar-15 6 document number: 62984 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-case (25 c) are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62984 . 10 -4 10 -3 10 -2 10 -1 1 2 1 0.1 0.01 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance s ingle pul s e 0.05 0.02 duty cycle = 0.5 0.2 0.1
ordering information www.vishay.com vishay siliconix revision: 25-aug-15 1 document number: 66697 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? 1212-8 and powerpak 1212-8w ordering codes for the sq rugged series power mosfets in the powerpak 1212-8 and powerpak 1212-8w packages: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sq7414aen sq7414aen-t1-ge3 sq7414aen-t1_ge3 sq7414aenw - sq7414aenw-t1_ge3 sq7415aen sq7415aen-t1-ge3 sq7415aen-t1_ge3 sq7415aenw - sq7415aenw-t1_ge3 sqs401en sqs401en-t1-ge3 sqs401en-t1_ge3 sqs401enw - sqs401enw-t1_ge3 sqs405en sqs405en-t1-ge3 sqs405en-t1_ge3 sqs405enw - sqs405enw-t1_ge3 sqs420en sqs420en-t1-ge3 sqs420en-t1_ge3 sqs423en sqs423en-t1-ge3 sqs423en-t1_ge3 sqs460en sqs460en-t1-ge3 sqs460en-t1_ge3 sqs462en sqs462en-t1-ge3 sqs462en-t1_ge3 sqs482en sqs482en-t1-ge3 sqs482en-t1_ge3 sqs484en sqs484en-t1-ge3 sqs484en-t1_ge3 sqs490en sqs490en-t1-ge3 sqs490en-t1_ge3 sqs840en sqs840en-t1-ge3 sqs840en-t1_ge3 sqs850en sqs850en-t1-ge3 sqs850en-t1_ge3
package information www.vishay.com vishay siliconix revision: 21-jan-15 1 document number: 64614 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? 1212-8w case outline dim. millimeters inches min. nom. max. min. nom. max. a 0.97 1.04 1.12 0.038 0.041 0.044 a1 0 - 0.05 0 - 0.002 a2 0 - 0.13 0 - 0.005 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 d 3.20 3.30 3.40 0.126 0.130 0.134 d1 2.95 3.05 3.15 0.116 0.120 0.124 d2 1.98 2.11 2.24 0.078 0.083 0.088 d4 0.47 typ. 0.0185 typ. d5 2.3 typ. 0.090 typ. e 3.20 3.30 3.40 0.126 0.130 0.134 e1 2.95 3.05 3.15 0.116 0.120 0.124 e2 1.47 1.60 1.73 0.058 0.063 0.068 e3 1.75 1.85 1.98 0.069 0.073 0.078 e4 0.34 typ. 0.013 typ. e 0.65 bsc. 0.026 bsc k 0.86 typ. 0.034 typ. h 0.30 0.41 0.51 0.012 0.016 0.020 l 0.30 0.43 0.56 0.012 0.017 0.022 l1 0.06 0.13 0.20 0.002 0.005 0.008 0 - 12 0 - 12 w 0.15 0.25 0.36 0.006 0.010 0.014 m 0.125 typ. 0.005 typ. ecn: c14-1253-rev. a, 21-jan-15 dwg: 6032 back s ide view of s ingle pad detail z z l1 e e1 2 a1 c a e m d1 d d2 d4 d5 b 2 e2 e4 l k h w 1 2 3 4 1 2 3 4 5 6 7 8 notes 1 inch will govern 2 dimen s ion s exclu s ive of mold gate burr s 3 dimen s ion s exclu s ive of mold fla s h and cutting burr s e3 a2
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
|
